SIHG64N65E-GE3

Vishay Siliconix

Product No:

SIHG64N65E-GE3

Manufacturer:

Package:

TO-247AC

Datasheet:

Description:

MOSFET N-CH 650V 64A TO247AC

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	7497 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	369 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	47mOhm @ 32A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-247AC
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	520W (Tc)
Series	-
Package / Case	TO-247-3
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	64A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tube
Base Product Number	SIHG64