SIHJ10N60E-T1-GE3

Vishay Siliconix

Product No:

SIHJ10N60E-T1-GE3

Manufacturer:

Package:

PowerPAK® SO-8

Datasheet:

Description:

MOSFET N-CH 600V 10A PPAK SO-8

Quantity:

Delivery:

Payment:

In Stock : 12158

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	784 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	50 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	360mOhm @ 5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4.5V @ 250µA
Supplier Device Package	PowerPAK® SO-8
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	89W (Tc)
Series	E
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	10A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Cut Tape (CT)
Base Product Number	SIHJ10