SIHK065N60E-T1-GE3

Vishay Siliconix

Product No:

SIHK065N60E-T1-GE3

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Package:

PowerPAK®10 x 12

Datasheet:

Description:

E SERIES POWER MOSFET POWERPAK 1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	2946 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	72 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	68mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	PowerPAK®10 x 12
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	192W (Tc)
Series	E
Package / Case	8-PowerBSFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	34A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)