SIHK125N60EF-T1GE3

Vishay Siliconix

Product No:

SIHK125N60EF-T1GE3

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Package:

PowerPAK®10 x 12

Datasheet:

Description:

E SERIES POWER MOSFET WITH FAST

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Operating Temperature	-55°C ~ 150°C
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	1863 pF @ 100 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	45 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	125mOhm @ 12A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	5V @ 250µA
Supplier Device Package	PowerPAK®10 x 12
Drain to Source Voltage (Vdss)	600 V
Power Dissipation (Max)	132W (Tc)
Series	EF
Package / Case	8-PowerBSFN
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	21A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)