SIHP12N60E-BE3
detaildesc

SIHP12N60E-BE3

Vishay Siliconix

Product No:

SIHP12N60E-BE3

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

Datasheet:

pdf

Description:

MOSFET N-CH 600V 12A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : 305

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.712813

    $1.712813

  • 10

    $1.541531

    $15.41531

  • 50

    $1.37025

    $68.5125

  • 100

    $1.198969

    $119.8969

  • 500

    $1.164713

    $582.3565

  • 1000

    $1.141875

    $1141.875

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 937 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 58 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 380mOhm @ 6A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 600 V
Power Dissipation (Max) 147W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 12A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Package Tube
Base Product Number SIHP12