SIHP6N80E-BE3
detaildesc

SIHP6N80E-BE3

Vishay Siliconix

Product No:

SIHP6N80E-BE3

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

Datasheet:

pdf

Description:

N-CHANNEL 800V

Quantity:

Delivery:

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Payment:

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In Stock : 275

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.818495

    $1.818495

  • 10

    $1.636645

    $16.36645

  • 50

    $1.454796

    $72.7398

  • 100

    $1.272946

    $127.2946

  • 500

    $1.236577

    $618.2885

  • 1000

    $1.21233

    $1212.33

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 827 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 940mOhm @ 3A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 800 V
Power Dissipation (Max) 78W (Tc)
Series E
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.4A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube