SIHP8N50D-GE3
detaildesc

SIHP8N50D-GE3

Vishay Siliconix

Product No:

SIHP8N50D-GE3

Manufacturer:

Vishay Siliconix

Package:

TO-220AB

Datasheet:

pdf

Description:

MOSFET N-CH 500V 8.7A TO220AB

Quantity:

Delivery:

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Payment:

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In Stock : 39

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.474515

    $1.474515

  • 10

    $1.327063

    $13.27063

  • 50

    $1.179612

    $58.9806

  • 100

    $1.032161

    $103.2161

  • 500

    $1.00267

    $501.335

  • 1000

    $0.98301

    $983.01

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 527 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Through Hole
Rds On (Max) @ Id, Vgs 850mOhm @ 4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 5V @ 250µA
Supplier Device Package TO-220AB
Drain to Source Voltage (Vdss) 500 V
Power Dissipation (Max) 156W (Tc)
Series -
Package / Case TO-220-3
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 8.7A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 10V
Package Tube
Base Product Number SIHP8