SIJH600E-T1-GE3

Vishay Siliconix

Product No:

SIJH600E-T1-GE3

Manufacturer:

Package:

PowerPAK® 8 x 8

Datasheet:

Description:

N-CHANNEL 60-V (D-S) 175C MOSFET

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	9950 pF @ 30 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	212 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	0.92mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	PowerPAK® 8 x 8
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	3.3W (Ta), 333W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® 8 x 8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	37A (Ta), 373A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)