SIR122LDP-T1-RE3
detaildesc

SIR122LDP-T1-RE3

Vishay Siliconix

Product No:

SIR122LDP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

-

Description:

N-CHANNEL 80-V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : 3823

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.698828

    $0.698828

  • 10

    $0.628945

    $6.28945

  • 50

    $0.559062

    $27.9531

  • 100

    $0.489179

    $48.9179

  • 500

    $0.475203

    $237.6015

  • 1000

    $0.465885

    $465.885

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2380 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.35mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 17.2A (Ta), 62.3A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)