SIR180DP-T1-RE3
detaildesc

SIR180DP-T1-RE3

Vishay Siliconix

Product No:

SIR180DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

MOSFET N-CH 60V 32.4A/60A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 2501

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.180714

    $1.180714

  • 10

    $1.062643

    $10.62643

  • 50

    $0.944571

    $47.22855

  • 100

    $0.8265

    $82.65

  • 500

    $0.802886

    $401.443

  • 1000

    $0.787143

    $787.143

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4030 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 87 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.05mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.6V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 5.4W (Ta), 83.3W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 32.4A (Ta), 60A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIR180