SIR570DP-T1-RE3
detaildesc

SIR570DP-T1-RE3

Vishay Siliconix

Product No:

SIR570DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

N-CHANNEL 150 V (D-S) MOSFET POW

Quantity:

Delivery:

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Payment:

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In Stock : 1185

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.57437

    $1.57437

  • 10

    $1.416933

    $14.16933

  • 50

    $1.259496

    $62.9748

  • 100

    $1.102059

    $110.2059

  • 500

    $1.070572

    $535.286

  • 1000

    $1.04958

    $1049.58

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3740 pF @ 75 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.9mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 150 V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Series TrenchFET® Gen V
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 19A (Ta), 77.4A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)