SIR5802DP-T1-RE3
detaildesc

SIR5802DP-T1-RE3

Vishay Siliconix

Product No:

SIR5802DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

N-CHANNEL 80 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : 1005

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.19889

    $1.19889

  • 10

    $1.079001

    $10.79001

  • 50

    $0.959112

    $47.9556

  • 100

    $0.839223

    $83.9223

  • 500

    $0.815245

    $407.6225

  • 1000

    $0.79926

    $799.26

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3020 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 60 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.9mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Series TrenchFET® Gen V
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 33.6A (Ta), 137.5A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)