SIR582DP-T1-RE3

Vishay Siliconix

Product No:

SIR582DP-T1-RE3

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Package:

PowerPAK® SO-8

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Description:

N-CHANNEL 80 V (D-S) MOSFET POWE

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3360 pF @ 40 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	67 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.4mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	PowerPAK® SO-8
Drain to Source Voltage (Vdss)	80 V
Power Dissipation (Max)	5.6W (Ta), 92.5W (Tc)
Series	TrenchFET® Gen V
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	28.9A (Ta), 116A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	7.5V, 10V
Package	Tape & Reel (TR)