SIR584DP-T1-RE3
detaildesc

SIR584DP-T1-RE3

Vishay Siliconix

Product No:

SIR584DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

N-CHANNEL 80 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : 2982

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.158727

    $1.158727

  • 10

    $1.042855

    $10.42855

  • 50

    $0.926982

    $46.3491

  • 100

    $0.811109

    $81.1109

  • 500

    $0.787935

    $393.9675

  • 1000

    $0.772485

    $772.485

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2800 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 56 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.9mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 5W (Ta), 83.3W (Tc)
Series TrenchFET® Gen V
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 24.7A (Ta), 100A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)