SIR624DP-T1-RE3
detaildesc

SIR624DP-T1-RE3

Vishay Siliconix

Product No:

SIR624DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

MOSFET N-CH 200V 5.7A/18.6A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 3350

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.683078

    $0.683078

  • 10

    $0.61477

    $6.1477

  • 50

    $0.546462

    $27.3231

  • 100

    $0.478154

    $47.8154

  • 500

    $0.464493

    $232.2465

  • 1000

    $0.455385

    $455.385

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1110 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 60mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 5W (Ta), 52W (Tc)
Series ThunderFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.7A (Ta), 18.6A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIR624