SIR818DP-T1-GE3

Vishay Siliconix

Product No:

SIR818DP-T1-GE3

Manufacturer:

Package:

PowerPAK® SO-8

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Description:

MOSFET N-CH 30V 50A PPAK SO-8

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3660 pF @ 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	95 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.8mOhm @ 20A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 250µA
Supplier Device Package	PowerPAK® SO-8
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	5.2W (Ta), 69W (Tc)
Series	TrenchFET®
Package / Case	PowerPAK® SO-8
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SIR818