SIR882BDP-T1-RE3
detaildesc

SIR882BDP-T1-RE3

Vishay Siliconix

Product No:

SIR882BDP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

MOSFET N-CH 100V 16.5/67.5A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 2822

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.9135

    $0.9135

  • 10

    $0.82215

    $8.2215

  • 50

    $0.7308

    $36.54

  • 100

    $0.63945

    $63.945

  • 500

    $0.62118

    $310.59

  • 1000

    $0.609

    $609

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3762 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 81 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.3mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 5W (Ta), 83.3W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16.5A (Ta), 67.5A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIR882