SIRA00DP-T1-GE3
detaildesc

SIRA00DP-T1-GE3

Vishay Siliconix

Product No:

SIRA00DP-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

MOSFET N-CH 30V 100A PPAK SO-8

Quantity:

Delivery:

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Payment:

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In Stock : 1716

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.359909

    $1.359909

  • 10

    $1.223918

    $12.23918

  • 50

    $1.087927

    $54.39635

  • 100

    $0.951936

    $95.1936

  • 500

    $0.924738

    $462.369

  • 1000

    $0.906606

    $906.606

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 11700 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 220 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 6.25W (Ta), 104W (Tc)
Series TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 100A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIRA00