SIRA99DP-T1-GE3
detaildesc

SIRA99DP-T1-GE3

Vishay Siliconix

Product No:

SIRA99DP-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

MOSFET P-CH 30V 47.9A/195A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 5483

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.74132

    $1.74132

  • 10

    $1.567188

    $15.67188

  • 50

    $1.393056

    $69.6528

  • 100

    $1.218924

    $121.8924

  • 500

    $1.184098

    $592.049

  • 1000

    $1.16088

    $1160.88

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 10955 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 260 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.7mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 6.35W (Ta), 104W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 47.9A (Ta), 195A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +16V, -20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIRA99