SIRC16DP-T1-RE3
detaildesc

SIRC16DP-T1-RE3

Vishay Siliconix

Product No:

SIRC16DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

N-CHANNEL 25-V (D-S) MOSFET W/SC

Quantity:

Delivery:

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Payment:

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In Stock : 3664

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.82278

    $0.82278

  • 10

    $0.740502

    $7.40502

  • 50

    $0.658224

    $32.9112

  • 100

    $0.575946

    $57.5946

  • 500

    $0.55949

    $279.745

  • 1000

    $0.54852

    $548.52

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature Schottky Diode (Body)
Input Capacitance (Ciss) (Max) @ Vds 5150 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 105 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.96mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 5W (Ta), 54.3W (Tc)
Series -
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 57A (Ta), 60A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)