SIRS4302DP-T1-GE3
detaildesc

SIRS4302DP-T1-GE3

Vishay Siliconix

Product No:

SIRS4302DP-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

N-CHANNEL 30 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : 9725

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.882597

    $1.882597

  • 10

    $1.694338

    $16.94338

  • 50

    $1.506078

    $75.3039

  • 100

    $1.317818

    $131.7818

  • 500

    $1.280166

    $640.083

  • 1000

    $1.255065

    $1255.065

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 10150 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 230 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.57mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 6.9W (Ta), 208W (Tc)
Series TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 87A (Ta), 478A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIRS4302