SIRS4400DP-T1-RE3
detaildesc

SIRS4400DP-T1-RE3

Vishay Siliconix

Product No:

SIRS4400DP-T1-RE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

N-CHANNEL 40 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : 4229

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $3.100703

    $3.100703

  • 10

    $2.790632

    $27.90632

  • 50

    $2.480562

    $124.0281

  • 100

    $2.170492

    $217.0492

  • 500

    $2.108478

    $1054.239

  • 1000

    $2.067135

    $2067.135

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 13730 pF @ 20 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 295 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.69mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 40 V
Power Dissipation (Max) 7.4W (Ta), 240W (Tc)
Series TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 77A (Ta), 440A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)