SIRS5100DP-T1-GE3
detaildesc

SIRS5100DP-T1-GE3

Vishay Siliconix

Product No:

SIRS5100DP-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® SO-8

Datasheet:

pdf

Description:

N-CHANNEL 100 V (D-S) MOSFET POW

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

paypal.webp paypal02.webp paypal03.webp paypal04.webp

In Stock : 2189

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.342812

    $2.342812

  • 10

    $2.108531

    $21.08531

  • 50

    $1.87425

    $93.7125

  • 100

    $1.639969

    $163.9969

  • 500

    $1.593112

    $796.556

  • 1000

    $1.561875

    $1561.875

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5400 pF @ 50 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 102 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 2.5mOhm @ 20A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® SO-8
Drain to Source Voltage (Vdss) 100 V
Power Dissipation (Max) 7.4W (Ta), 240W (Tc)
Series TrenchFET®
Package / Case PowerPAK® SO-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 39A (Ta), 225A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIRS5100