SIS112LDN-T1-GE3
Vishay Siliconix
Product No:
SIS112LDN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8
Datasheet:
Description:
N-CHANNEL 100 V (D-S) MOSFET POW
Quantity:
Delivery:
Payment:
In Stock : 3913
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.3654
$0.3654
10
$0.319725
$3.19725
50
$0.27405
$13.7025
100
$0.251213
$25.1213
500
$0.239794
$119.897
1000
$0.228375
$228.375
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 355 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 11.8 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 119mOhm @ 3.5A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 3.2W (Ta), 19.8W (Tc) |
| Series | TrenchFET® |
| Package / Case | PowerPAK® 1212-8 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 3.5A (Ta), 8.8A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
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