SIS178LDN-T1-GE3
detaildesc

SIS178LDN-T1-GE3

Vishay Siliconix

Product No:

SIS178LDN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8

Datasheet:

pdf

Description:

N-CHANNEL 70 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : 5291

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.493248

    $0.493248

  • 10

    $0.431592

    $4.31592

  • 50

    $0.369936

    $18.4968

  • 100

    $0.339108

    $33.9108

  • 500

    $0.323694

    $161.847

  • 1000

    $0.30828

    $308.28

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1135 pF @ 35 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 28.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9.5mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8
Drain to Source Voltage (Vdss) 70 V
Power Dissipation (Max) 3.6W (Ta), 39W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 13.9A (Ta), 45.3A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)