SIS413DN-T1-GE3
detaildesc

SIS413DN-T1-GE3

Vishay Siliconix

Product No:

SIS413DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8

Datasheet:

pdf

Description:

MOSFET P-CH 30V 18A PPAK 1212-8

Quantity:

Delivery:

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Payment:

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In Stock : 2804

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.309

    $0.309

  • 10

    $0.270375

    $2.70375

  • 50

    $0.23175

    $11.5875

  • 100

    $0.212438

    $21.2438

  • 500

    $0.202781

    $101.3905

  • 1000

    $0.193125

    $193.125

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 4280 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 110 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9.4mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.7W (Ta), 52W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 18A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SIS413