SISA12BDN-T1-GE3
Vishay Siliconix
Product No:
SISA12BDN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8
Datasheet:
-
Description:
N-CHANNEL 30-V (D-S) MOSFET POWE
Quantity:
Delivery:
Payment:
In Stock : 4894
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.5208
$0.5208
10
$0.4557
$4.557
50
$0.3906
$19.53
100
$0.35805
$35.805
500
$0.341775
$170.8875
1000
$0.3255
$325.5
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1470 pF @ 15 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 4.3mOhm @ 10A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 2.4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8 |
| Drain to Source Voltage (Vdss) | 30 V |
| Power Dissipation (Max) | 4W (Ta), 52W (Tc) |
| Series | TrenchFET® Gen IV |
| Package / Case | PowerPAK® 1212-8 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 24A (Ta), 87A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | +20V, -16V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Package | Tape & Reel (TR) |
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