SISA18ADN-T1-GE3
detaildesc

SISA18ADN-T1-GE3

Vishay Siliconix

Product No:

SISA18ADN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8

Datasheet:

pdf

Description:

MOSFET N-CH 30V 38.3A PPAK1212-8

Quantity:

Delivery:

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Payment:

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In Stock : 671

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.0815

    $1.0815

  • 10

    $0.97335

    $9.7335

  • 50

    $0.8652

    $43.26

  • 100

    $0.75705

    $75.705

  • 500

    $0.73542

    $367.71

  • 1000

    $0.721

    $721

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1000 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 21.5 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 7.5mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.4V @ 250µA
Supplier Device Package PowerPAK® 1212-8
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.2W (Ta), 19.8W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 38.3A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISA18