SISD5300DN-T1-GE3
detaildesc

SISD5300DN-T1-GE3

Vishay Siliconix

Product No:

SISD5300DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-F

Datasheet:

pdf

Description:

N-CHANNEL 30 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : 3586

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.061077

    $1.061077

  • 10

    $0.95497

    $9.5497

  • 50

    $0.848862

    $42.4431

  • 100

    $0.742754

    $74.2754

  • 500

    $0.721533

    $360.7665

  • 1000

    $0.707385

    $707.385

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 5030 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 36.2 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.87mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package PowerPAK® 1212-F
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 5.4W (Ta), 57W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-F
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 62A (Ta), 198A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +16V, -12V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)