SISF02DN-T1-GE3
detaildesc

SISF02DN-T1-GE3

Vishay Siliconix

Product No:

SISF02DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8SCD

Datasheet:

pdf

Description:

MOSFET DUAL N-CH 25V 1212-8

Quantity:

Delivery:

1.webp 4.webp 5.webp 2.webp 3.webp

Payment:

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In Stock : 7

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.884835

    $0.884835

  • 10

    $0.796351

    $7.96351

  • 50

    $0.707868

    $35.3934

  • 100

    $0.619385

    $61.9385

  • 500

    $0.601688

    $300.844

  • 1000

    $0.58989

    $589.89

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual) Common Drain
Input Capacitance (Ciss) (Max) @ Vds 2650pF @ 10V
Gate Charge (Qg) (Max) @ Vgs 56nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 3.5mOhm @ 7A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.3V @ 250µA
Supplier Device Package PowerPAK® 1212-8SCD
Drain to Source Voltage (Vdss) 25V
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8SCD
Technology MOSFET (Metal Oxide)
Power - Max 5.2W (Ta), 69.4W (Tc)
Current - Continuous Drain (Id) @ 25°C 30.5A (Ta), 60A (Tc)
Mfr Vishay Siliconix
Package Tape & Reel (TR)
Base Product Number SISF02