SISH103DN-T1-GE3
detaildesc

SISH103DN-T1-GE3

Vishay Siliconix

Product No:

SISH103DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8SH

Datasheet:

pdf

Description:

P-CHANNEL 30 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : 7823

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $2.079

    $2.079

  • 10

    $1.8711

    $18.711

  • 50

    $1.6632

    $83.16

  • 100

    $1.4553

    $145.53

  • 500

    $1.41372

    $706.86

  • 1000

    $1.386

    $1386

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2540 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 72 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 155mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.67W (Ta), 41.6W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 54A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±30V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISH103