SISH108DN-T1-GE3
detaildesc

SISH108DN-T1-GE3

Vishay Siliconix

Product No:

SISH108DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8SH

Datasheet:

pdf

Description:

MOSFET N-CH 20V 14A PPAK1212-8SH

Quantity:

Delivery:

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Payment:

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In Stock : 3470

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.378

    $0.378

  • 10

    $0.33075

    $3.3075

  • 50

    $0.2835

    $14.175

  • 100

    $0.259875

    $25.9875

  • 500

    $0.248062

    $124.031

  • 1000

    $0.23625

    $236.25

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 30 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.9mOhm @ 22A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 1.5W (Ta)
Series TrenchFET® Gen II
Package / Case PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 14A (Ta)
Mfr Vishay Siliconix
Vgs (Max) ±16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISH108