SISH129DN-T1-GE3
detaildesc

SISH129DN-T1-GE3

Vishay Siliconix

Product No:

SISH129DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8SH

Datasheet:

pdf

Description:

MOSFET P-CH 30V 14.4A/35A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 3599

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.564144

    $0.564144

  • 10

    $0.493626

    $4.93626

  • 50

    $0.423108

    $21.1554

  • 100

    $0.387849

    $38.7849

  • 500

    $0.370219

    $185.1095

  • 1000

    $0.35259

    $352.59

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Product Information

Parameter Info

User Guide

Operating Temperature -50°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3345 pF @ 15 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 71 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 11.4mOhm @ 14.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.8V @ 250µA
Supplier Device Package PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.8W (Ta), 52.1W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 14.4A (Ta), 35A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISH129