SISH407DN-T1-GE3
detaildesc

SISH407DN-T1-GE3

Vishay Siliconix

Product No:

SISH407DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8SH

Datasheet:

pdf

Description:

MOSFET P-CH 20V 15.4A/25A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 23312

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.472416

    $0.472416

  • 10

    $0.413364

    $4.13364

  • 50

    $0.354312

    $17.7156

  • 100

    $0.324786

    $32.4786

  • 500

    $0.310023

    $155.0115

  • 1000

    $0.29526

    $295.26

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2760 pF @ 10 V
FET Type P-Channel
Gate Charge (Qg) (Max) @ Vgs 93.8 nC @ 8 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 9.5mOhm @ 15.3A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1V @ 250µA
Supplier Device Package PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 3.6W (Ta), 33W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 15.4A (Ta), 25A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±8V
Drive Voltage (Max Rds On, Min Rds On) 1.8V, 4.5V
Package Tape & Reel (TR)
Base Product Number SISH407