SISHA18ADN-T1-GE3
detaildesc

SISHA18ADN-T1-GE3

Vishay Siliconix

Product No:

SISHA18ADN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8SH

Datasheet:

pdf

Description:

N-CHANNEL 30 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : 8822

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.430584

    $0.430584

  • 10

    $0.376761

    $3.76761

  • 50

    $0.322938

    $16.1469

  • 100

    $0.296027

    $29.6027

  • 500

    $0.282571

    $141.2855

  • 1000

    $0.269115

    $269.115

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1650 pF @ 15 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 33 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.6mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss) 30 V
Power Dissipation (Max) 3.5W (Ta), 26.5W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 22A (Ta), 60A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)