SISS10ADN-T1-GE3

Vishay Siliconix

Product No:

SISS10ADN-T1-GE3

Manufacturer:

Package:

PowerPAK® 1212-8S

Datasheet:

Description:

MOSFET N-CH 40V 31.7A/109A PPAK

Quantity:

Delivery:

Payment:

In Stock : 4156

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

Not the price you want? Send RFQ Now and we'll contact you ASAP.

Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Input Capacitance (Ciss) (Max) @ Vds	3030 pF @ 20 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	61 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	2.65mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 250µA
Supplier Device Package	PowerPAK® 1212-8S
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	4.8W (Ta), 56.8W (Tc)
Series	TrenchFET® Gen IV
Package / Case	PowerPAK® 1212-8S
Technology	MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C	31.7A (Ta), 109A (Tc)
Mfr	Vishay Siliconix
Vgs (Max)	+20V, -16V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	SISS10