SISS22DN-T1-GE3
detaildesc

SISS22DN-T1-GE3

Vishay Siliconix

Product No:

SISS22DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8S

Datasheet:

pdf

Description:

MOSFET N-CH 60V 25A/90.6A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 6871

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.984375

    $0.984375

  • 10

    $0.885938

    $8.85938

  • 50

    $0.7875

    $39.375

  • 100

    $0.689063

    $68.9063

  • 500

    $0.669375

    $334.6875

  • 1000

    $0.65625

    $656.25

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1870 pF @ 30 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 44 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 3.6V @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 60 V
Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 25A (Ta), 90.6A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISS22