SISS26DN-T1-GE3
Vishay Siliconix
Product No:
SISS26DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8S
Datasheet:
Description:
MOSFET N-CH 60V 60A PPAK1212-8S
Quantity:
Delivery:
Payment:
In Stock : 10471
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.956813
$0.956813
10
$0.861131
$8.61131
50
$0.76545
$38.2725
100
$0.669769
$66.9769
500
$0.650633
$325.3165
1000
$0.637875
$637.875
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1710 pF @ 30 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 37 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 4.5mOhm @ 15A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.6V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drain to Source Voltage (Vdss) | 60 V |
| Power Dissipation (Max) | 57W (Tc) |
| Series | TrenchFET® Gen IV |
| Package / Case | PowerPAK® 1212-8S |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 60A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SISS26 |
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