SISS28DN-T1-GE3
detaildesc

SISS28DN-T1-GE3

Vishay Siliconix

Product No:

SISS28DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8S

Datasheet:

pdf

Description:

MOSFET N-CH 25V 60A PPAK1212-8S

Quantity:

Delivery:

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Payment:

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In Stock : 4176

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.5586

    $0.5586

  • 10

    $0.488775

    $4.88775

  • 50

    $0.41895

    $20.9475

  • 100

    $0.384038

    $38.4038

  • 500

    $0.366581

    $183.2905

  • 1000

    $0.349125

    $349.125

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 3640 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 35 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 1.52mOhm @ 15A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2V @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 25 V
Power Dissipation (Max) 57W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 60A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +20V, -16V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISS28