SISS30LDN-T1-GE3
detaildesc

SISS30LDN-T1-GE3

Vishay Siliconix

Product No:

SISS30LDN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8S

Datasheet:

pdf

Description:

MOSFET N-CH 80V 16A/55.5A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 6151

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.738202

    $0.738202

  • 10

    $0.664382

    $6.64382

  • 50

    $0.590562

    $29.5281

  • 100

    $0.516742

    $51.6742

  • 500

    $0.501978

    $250.989

  • 1000

    $0.492135

    $492.135

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2070 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 50 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 8.5mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 16A (Ta), 55.5A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISS30