SISS5112DN-T1-GE3
Vishay Siliconix
Product No:
SISS5112DN-T1-GE3
Manufacturer:
Package:
PowerPAK® 1212-8S
Datasheet:
Description:
N-CHANNEL 100 V (D-S) MOSFET POW
Quantity:
Delivery:
Payment:
In Stock : 7918
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.884835
$0.884835
10
$0.796351
$7.96351
50
$0.707868
$35.3934
100
$0.619385
$61.9385
500
$0.601688
$300.844
1000
$0.58989
$589.89
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 790 pF @ 50 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 14.9mOhm @ 10A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Supplier Device Package | PowerPAK® 1212-8S |
| Drain to Source Voltage (Vdss) | 100 V |
| Power Dissipation (Max) | 3.7W (Ta), 52W (Tc) |
| Series | TrenchFET® |
| Package / Case | PowerPAK® 1212-8S |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 11A (Ta), 40.7A (Tc) |
| Mfr | Vishay Siliconix |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 7.5V, 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SISS5112 |
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