SISS5808DN-T1-GE3
detaildesc

SISS5808DN-T1-GE3

Vishay Siliconix

Product No:

SISS5808DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8S

Datasheet:

pdf

Description:

N-CHANNEL 80 V (D-S) MOSFET POWE

Quantity:

Delivery:

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Payment:

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In Stock : 6919

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.141875

    $1.141875

  • 10

    $1.027688

    $10.27688

  • 50

    $0.9135

    $45.675

  • 100

    $0.799313

    $79.9313

  • 500

    $0.776475

    $388.2375

  • 1000

    $0.76125

    $761.25

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 1210 pF @ 40 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 24 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 119mOhm @ 3.5A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 80 V
Power Dissipation (Max) 5W (Ta), 65.7W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 18.3A (Ta), 66.6A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISS5808