SISS76LDN-T1-GE3
detaildesc

SISS76LDN-T1-GE3

Vishay Siliconix

Product No:

SISS76LDN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8SH

Datasheet:

pdf

Description:

MOSFET N-CH 70V 19.6A/67.4A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 4180

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.756472

    $0.756472

  • 10

    $0.680825

    $6.80825

  • 50

    $0.605178

    $30.2589

  • 100

    $0.529531

    $52.9531

  • 500

    $0.514401

    $257.2005

  • 1000

    $0.504315

    $504.315

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 2780 pF @ 35 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 33.5 nC @ 4.5 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 6.25mOhm @ 10A, 4.5V
Product Status Active
Vgs(th) (Max) @ Id 1.6V @ 250µA
Supplier Device Package PowerPAK® 1212-8SH
Drain to Source Voltage (Vdss) 70 V
Power Dissipation (Max) 4.8W (Ta), 57W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8SH
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 19.6A (Ta), 67.4A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±12V
Drive Voltage (Max Rds On, Min Rds On) 3.3V, 4.5V
Package Tape & Reel (TR)
Base Product Number SISS76