SISS80DN-T1-GE3
detaildesc

SISS80DN-T1-GE3

Vishay Siliconix

Product No:

SISS80DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8S

Datasheet:

pdf

Description:

MOSFET N-CH 20V 58.3A/210A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 8848

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $1.059187

    $1.059187

  • 10

    $0.953269

    $9.53269

  • 50

    $0.84735

    $42.3675

  • 100

    $0.741431

    $74.1431

  • 500

    $0.720248

    $360.124

  • 1000

    $0.706125

    $706.125

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 6450 pF @ 10 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 122 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 0.92mOhm @ 10A, 10V
Product Status Active
Vgs(th) (Max) @ Id 1.5V @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 20 V
Power Dissipation (Max) 5W (Ta), 65W (Tc)
Series TrenchFET® Gen IV
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 58.3A (Ta), 210A (Tc)
Mfr Vishay Siliconix
Vgs (Max) +12V, -8V
Drive Voltage (Max Rds On, Min Rds On) 2.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISS80