SISS94DN-T1-GE3
detaildesc

SISS94DN-T1-GE3

Vishay Siliconix

Product No:

SISS94DN-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

PowerPAK® 1212-8S

Datasheet:

pdf

Description:

MOSFET N-CH 200V 5.4A/19.5A PPAK

Quantity:

Delivery:

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Payment:

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In Stock : 2377

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.554064

    $0.554064

  • 10

    $0.484806

    $4.84806

  • 50

    $0.415548

    $20.7774

  • 100

    $0.380919

    $38.0919

  • 500

    $0.363604

    $181.802

  • 1000

    $0.34629

    $346.29

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Input Capacitance (Ciss) (Max) @ Vds 350 pF @ 100 V
FET Type N-Channel
Gate Charge (Qg) (Max) @ Vgs 21 nC @ 10 V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 75mOhm @ 5.4A, 10V
Product Status Active
Vgs(th) (Max) @ Id 4V @ 250µA
Supplier Device Package PowerPAK® 1212-8S
Drain to Source Voltage (Vdss) 200 V
Power Dissipation (Max) 5.1W (Ta), 65.8W (Tc)
Series TrenchFET®
Package / Case PowerPAK® 1212-8S
Technology MOSFET (Metal Oxide)
Current - Continuous Drain (Id) @ 25°C 5.4A (Ta), 19.5A (Tc)
Mfr Vishay Siliconix
Vgs (Max) ±20V
Drive Voltage (Max Rds On, Min Rds On) 7.5V, 10V
Package Tape & Reel (TR)
Base Product Number SISS94