SIZ998BDT-T1-GE3
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SIZ998BDT-T1-GE3

Vishay Siliconix

Product No:

SIZ998BDT-T1-GE3

Manufacturer:

Vishay Siliconix

Package:

8-PowerPair® (6x5)

Datasheet:

-

Description:

DUAL N-CHANNEL 30-V (D-S) MOSFET

Quantity:

Delivery:

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Payment:

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In Stock : 20652

Minimum: 1 Multiples: 1

Qty

Unit Price

Ext Price

  • 1

    $0.56952

    $0.56952

  • 10

    $0.49833

    $4.9833

  • 50

    $0.42714

    $21.357

  • 100

    $0.391545

    $39.1545

  • 500

    $0.373748

    $186.874

  • 1000

    $0.35595

    $355.95

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Product Information

Parameter Info

User Guide

Operating Temperature -55°C ~ 150°C (TJ)
FET Feature -
Configuration 2 N-Channel (Dual), Schottky
Input Capacitance (Ciss) (Max) @ Vds 790pF @ 15V, 2130pF @ 15V
Gate Charge (Qg) (Max) @ Vgs 18nC @ 10V, 46.7nC @ 10V
Mounting Type Surface Mount
Rds On (Max) @ Id, Vgs 4.39mOhm @ 15A, 10V, 2.4mOhm @ 19A, 10V
Product Status Active
Vgs(th) (Max) @ Id 2.2V @ 250µA
Supplier Device Package 8-PowerPair® (6x5)
Drain to Source Voltage (Vdss) 30V
Series TrenchFET® Gen IV
Package / Case 8-PowerWDFN
Technology MOSFET (Metal Oxide)
Power - Max 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)
Current - Continuous Drain (Id) @ 25°C 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)
Mfr Vishay Siliconix
Package Tape & Reel (TR)
Base Product Number SIZ998