Infineon Technologies
Product No:
SPB02N60S5ATMA1
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
MOSFET N-CH 600V 1.8A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.6804
$0.6804
10
$0.59535
$5.9535
50
$0.5103
$25.515
100
$0.467775
$46.7775
500
$0.446512
$223.256
1000
$0.42525
$425.25
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Operating Temperature | -55°C ~ 150°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 240 pF @ 25 V |
FET Type | N-Channel |
Gate Charge (Qg) (Max) @ Vgs | 9.5 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 3Ohm @ 1.1A, 10V |
Product Status | Obsolete |
Vgs(th) (Max) @ Id | 5.5V @ 80µA |
Supplier Device Package | PG-TO263-3-2 |
Drain to Source Voltage (Vdss) | 600 V |
Power Dissipation (Max) | 25W (Tc) |
Series | CoolMOS™ |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 1.8A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | SPB02N |