SPB11N60C2
Infineon Technologies
Product No:
SPB11N60C2
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
N-CHANNEL POWER MOSFET
Quantity:
Delivery:
Payment:
In Stock : 191
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.94525
$2.94525
10
$2.650725
$26.50725
50
$2.3562
$117.81
100
$2.061675
$206.1675
500
$2.00277
$1001.385
1000
$1.9635
$1963.5
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Product Information
Parameter Info
User Guide
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 1460 pF @ 25 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 41.5 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 7A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 5.5V @ 500µA |
| Supplier Device Package | PG-TO263-3-2 |
| Drain to Source Voltage (Vdss) | 600 V |
| Power Dissipation (Max) | 125W (Tc) |
| Series | CoolMOS™ |
| Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 11A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Bulk |
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