Infineon Technologies
Product No:
SPB80P06PGATMA1
Manufacturer:
Package:
PG-TO263-3-2
Datasheet:
-
Description:
MOSFET P-CH 60V 80A TO263-3
Quantity:
Delivery:
Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$2.287838
$2.287838
10
$2.059054
$20.59054
50
$1.83027
$91.5135
100
$1.601486
$160.1486
500
$1.555729
$777.8645
1000
$1.525225
$1525.225
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Operating Temperature | -55°C ~ 175°C (TJ) |
FET Feature | - |
Input Capacitance (Ciss) (Max) @ Vds | 5033 pF @ 25 V |
FET Type | P-Channel |
Gate Charge (Qg) (Max) @ Vgs | 173 nC @ 10 V |
Mounting Type | Surface Mount |
Rds On (Max) @ Id, Vgs | 23mOhm @ 64A, 10V |
Product Status | Active |
Vgs(th) (Max) @ Id | 4V @ 5.5mA |
Supplier Device Package | PG-TO263-3-2 |
Drain to Source Voltage (Vdss) | 60 V |
Power Dissipation (Max) | 340W (Tc) |
Series | SIPMOS® |
Package / Case | TO-263-3, D²Pak (2 Leads + Tab), TO-263AB |
Technology | MOSFET (Metal Oxide) |
Current - Continuous Drain (Id) @ 25°C | 80A (Tc) |
Mfr | Infineon Technologies |
Vgs (Max) | ±20V |
Drive Voltage (Max Rds On, Min Rds On) | 10V |
Package | Tape & Reel (TR) |
Base Product Number | SPB80P06 |