
Infineon Technologies
Product No:
SPD02N80C3ATMA1
Manufacturer:
Package:
PG-TO252-3
Datasheet:
-
Description:
MOSFET N-CH 800V 2A TO252-3
Quantity:
Delivery:

Payment:
Minimum: 1 Multiples: 1
Qty
Unit Price
Ext Price
1
$0.707963
$0.707963
10
$0.637166
$6.37166
50
$0.56637
$28.3185
100
$0.495574
$49.5574
500
$0.481415
$240.7075
1000
$0.471975
$471.975
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| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Feature | - |
| Input Capacitance (Ciss) (Max) @ Vds | 290 pF @ 100 V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 16 nC @ 10 V |
| Mounting Type | Surface Mount |
| Rds On (Max) @ Id, Vgs | 2.7Ohm @ 1.2A, 10V |
| Product Status | Active |
| Vgs(th) (Max) @ Id | 3.9V @ 120µA |
| Supplier Device Package | PG-TO252-3 |
| Drain to Source Voltage (Vdss) | 800 V |
| Power Dissipation (Max) | 42W (Tc) |
| Series | CoolMOS™ |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Technology | MOSFET (Metal Oxide) |
| Current - Continuous Drain (Id) @ 25°C | 2A (Tc) |
| Mfr | Infineon Technologies |
| Vgs (Max) | ±20V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Package | Tape & Reel (TR) |
| Base Product Number | SPD02N80 |